The Early Work on Sputtering Formation of Amorphous IGZO (In-Ga-Zn-O) Channel and SnO Channel TFTs

2:00 PM - 2:20 PM

[AMD1-4 (Invited)] The Early Work on Sputtering Formation of Amorphous IGZO (In-Ga-Zn-O) Channel and SnO Channel TFTs

*Hisato Yabuta^1,2, Ryo Hayashi¹, Hideya Kumomi^1,3 (1.Canon Inc. (Japan), 2.Kyushu University (Japan), 3.Tokyo Institute of Technology (Japan))

IGZO (In-Ga-Zn-O), sputtering, thin-film transistor (TFT), SnO, oxide semiconductor

We will talk about the early work on sputtering formation of amorphous IGZO (In-Ga-Zn-O) channel and SnO TFTs.