High-mobility (&gt;100 cm2V−1s−1) In2O3:H Thin-film Transistors by Solid-phase Crystallization

Yusaku Magari

doi:https://doi.org/10.36463/idw.2022.0120

14:50 〜 15:10

[AMD2-1 (Invited)] High-mobility (>100 cm²V⁻¹s⁻¹) In₂O₃:H Thin-film Transistors by Solid-phase Crystallization

*Yusaku Magari¹、Wenchang Yeh²、Mamoru Furuta³ (1.Hokkaido University (Japan)、2.Shimane University (Japan)、3.Kochi University of Technology (Japan))

polycrystalline oxide semiconductors, In2O3:H, solid-phase crystallization, thin-film transistors, high mobility

https://doi.org/10.36463/idw.2022.0120

We propose a simple process to obtain high-performance thin-film transistors (TFTs), namely hydrogenated polycrystalline In₂O₃ (In₂O₃:H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process. In₂O₃:H TFTs fabricated at 300 °C exhibit superior switching properties with field-effect mobility of 139.2 cm²V⁻¹s⁻¹, a subthreshold swing of 0.19 Vdec⁻¹, and a threshold voltage of 0.2 V.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[AMD2-1 (Invited)] High-mobility (>100 cm2V−1s−1) In2O3:H Thin-film Transistors by Solid-phase Crystallization

[AMD2-1 (Invited)] High-mobility (>100 cm²V⁻¹s⁻¹) In₂O₃:H Thin-film Transistors by Solid-phase Crystallization