International Display Workshops General Incorporated Association

15:50 〜 16:10

[AMD2-4L] Development of High Mobility Oxide Semiconductor Sputtering Target

*Shigeki Tokuchi1、Ryo Shiranita1、Kyosuke Teramura1、Tomoyasu Yano1、Mamoru Furuta2 (1.MITSUI MINING & SMELTING CO.,LTD. (Japan)、2.Kochi University of Technology (Japan))

Oxide semiconductor, In-Zn-O system, High field effect mobility, High-definition displays

https://doi.org/10.36463/idw.2022.0132

We have investigated oxide semiconductor material In-Zn-O-X system to achieve high electron mobility. By choosing appropriate X material and optimizing the composition, we have realized Thin-Film Transistor (TFT) with its field effect mobility over 60 cm2/vs, which is suitable to high-definition displays.