Development of High Mobility Oxide Semiconductor Sputtering Target

Shigeki Tokuchi, Ryo Shiranita, Kyosuke Teramura, Tomoyasu Yano, Mamoru Furuta

doi:https://doi.org/10.36463/idw.2022.0132

3:50 PM - 4:10 PM

[AMD2-4L] Development of High Mobility Oxide Semiconductor Sputtering Target

*Shigeki Tokuchi¹, Ryo Shiranita¹, Kyosuke Teramura¹, Tomoyasu Yano¹, Mamoru Furuta² (1.MITSUI MINING & SMELTING CO.,LTD. (Japan), 2.Kochi University of Technology (Japan))

Oxide semiconductor, In-Zn-O system, High field effect mobility, High-definition displays

https://doi.org/10.36463/idw.2022.0132

We have investigated oxide semiconductor material In-Zn-O-X system to achieve high electron mobility. By choosing appropriate X material and optimizing the composition, we have realized Thin-Film Transistor (TFT) with its field effect mobility over 60 cm²/vs, which is suitable to high-definition displays.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[AMD2-4L] Development of High Mobility Oxide Semiconductor Sputtering Target