15:50 〜 16:10
[AMD2-4L] Development of High Mobility Oxide Semiconductor Sputtering Target
Oxide semiconductor, In-Zn-O system, High field effect mobility, High-definition displays
We have investigated oxide semiconductor material In-Zn-O-X system to achieve high electron mobility. By choosing appropriate X material and optimizing the composition, we have realized Thin-Film Transistor (TFT) with its field effect mobility over 60 cm2/vs, which is suitable to high-definition displays.