5:20 PM - 5:40 PM
[AMD3-3] InGaZnO Synaptic Thin-Film Transistor with AlOx Dielectric
Synaptic transistor, Thin-film transistor, Aluminum Oxide, Charge trapping
We demonstrate an InGaZnO (IGZO) synaptic thin-film transistor (TFT) fabricated by solution process. To mimic the electrical properties of biological synapses such as excitatory postsynaptic potential (EPSC), long-term potentiation (LTP), the AlOx is used as a charge trapping layer of the IGZO TFT.