International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 29 (IDW '22)

Proceedings of the International Display Workshops Volume 29 (IDW '22)

2022年12月14日 〜 2022年12月16日
Fukuoka International Congress Center

17:20 〜 17:40

[AMD3-3] InGaZnO Synaptic Thin-Film Transistor with AlOx Dielectric

*Taebin Lim1、Jinbaek Bae1、Jiseob Lee1、Jin Jang1 (1.Kyung Hee University (Korea))

Synaptic transistor, Thin-film transistor, Aluminum Oxide, Charge trapping

https://doi.org/10.36463/idw.2022.0143

We demonstrate an InGaZnO (IGZO) synaptic thin-film transistor (TFT) fabricated by solution process. To mimic the electrical properties of biological synapses such as excitatory postsynaptic potential (EPSC), long-term potentiation (LTP), the AlOx is used as a charge trapping layer of the IGZO TFT.