1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS

Minato Ito, Munehiro Kozuma, Toshihiko Saito, Hidetomo Kobayashi, Ryota Hodo, Tsutomu Murakawa, Hitoshi Kunitake, Tomoya Aoyama, Shih-Ci Yen, Chuan-Hua Chang, Wen-Hsiang Hsieh, Hiroshi Yoshida, Min-Cheng Chen, Ming-Han Liao, Shou-Zen Chang, Shunpei Yamazaki

doi:https://doi.org/10.36463/idw.2022.0172

10:00 AM - 10:20 AM

[AMD5-4L (Invited)] 1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS

*Minato Ito¹, Munehiro Kozuma¹, Toshihiko Saito¹, Hidetomo Kobayashi¹, Ryota Hodo¹, Tsutomu Murakawa¹, Hitoshi Kunitake¹, Tomoya Aoyama¹, Shih-Ci Yen², Chuan-Hua Chang², Wen-Hsiang Hsieh², Hiroshi Yoshida², Min-Cheng Chen², Ming-Han Liao³, Shou-Zen Chang², Shunpei Yamazaki¹ (1.Semiconductor Energy Laboratory Co. Ltd. (Japan), 2.Powerchip Semiconductor Manufacturing Corporation (Taiwan), 3.National Taiwan University (Taiwan))

OSFET, OLED, Ultra high definition

https://doi.org/10.36463/idw.2022.0172

Oxide semiconductor field-effect transistors (OSFETs) can be stacked over silicon (Si) field-effect transistors (FETs). We used this technology to form Si–oxide semiconductor composite LSI and prototyped an OLED display in which Si FETs and OSFETs are monolithically stacked. This stacking enabled a larger screen and a lower power driver.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[AMD5-4L (Invited)] 1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS