1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS

Minato Ito

doi:https://doi.org/10.36463/idw.2022.0172

10:00 〜 10:20

[AMD5-4L (Invited)] 1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS

*Minato Ito¹、Munehiro Kozuma¹、Toshihiko Saito¹、Hidetomo Kobayashi¹、Ryota Hodo¹、Tsutomu Murakawa¹、Hitoshi Kunitake¹、Tomoya Aoyama¹、Shih-Ci Yen²、Chuan-Hua Chang²、Wen-Hsiang Hsieh²、Hiroshi Yoshida²、Min-Cheng Chen²、Ming-Han Liao³、Shou-Zen Chang²、Shunpei Yamazaki¹ (1.Semiconductor Energy Laboratory Co. Ltd. (Japan)、2.Powerchip Semiconductor Manufacturing Corporation (Taiwan)、3.National Taiwan University (Taiwan))

OSFET, OLED, Ultra high definition

https://doi.org/10.36463/idw.2022.0172

Oxide semiconductor field-effect transistors (OSFETs) can be stacked over silicon (Si) field-effect transistors (FETs). We used this technology to form Si–oxide semiconductor composite LSI and prototyped an OLED display in which Si FETs and OSFETs are monolithically stacked. This stacking enabled a larger screen and a lower power driver.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[AMD5-4L (Invited)] 1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS