International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 29 (IDW '22)

Proceedings of the International Display Workshops Volume 29 (IDW '22)

2022年12月14日 〜 2022年12月16日
Fukuoka International Congress Center

[AMDp1-1] Electric Field Thermopower Modulation Analyses of Effective Channel Thickness of Amorphous InGaO3(ZnO)m Thin Film Transistors

*Prashant Ghediya1、Hui Yang1,2、Takashi Fujimoto1、Yuqiao Zhang3,4、Yasutaka Matsuo1、Yusaku Magari1、Hiromichi Ohta1 (1.Hokkaido University (Japan)、2.Beijing Jiaotong University (China)、3.Jiangsu University (China)、4.Foshan Institute for New Materials (China))

Thermopower modulation, Amorphous InGaO3(ZnO)m, Effective channel thickness

https://doi.org/10.36463/idw.2022.0198

Here, we analyzed the transistor characteristics of amorphous InGaO3(ZnO)m thin film transistors (TFTs) by the electric field thermopower modulation and found that the effective channel thickness of the TFTs varies from ~2 nm to ~28 nm depending on the m-value.