Electric Field Thermopower Modulation Analyses of Effective Channel Thickness of Amorphous InGaO3(ZnO)m Thin Film Transistors

Prashant Ghediya, Hui Yang, Takashi Fujimoto, Yuqiao Zhang, Yasutaka Matsuo, Yusaku Magari, Hiromichi Ohta

doi:https://doi.org/10.36463/idw.2022.0198

[AMDp1-1] Electric Field Thermopower Modulation Analyses of Effective Channel Thickness of Amorphous InGaO₃(ZnO)_m Thin Film Transistors

*Prashant Ghediya¹, Hui Yang^1,2, Takashi Fujimoto¹, Yuqiao Zhang^3,4, Yasutaka Matsuo¹, Yusaku Magari¹, Hiromichi Ohta¹ (1.Hokkaido University (Japan), 2.Beijing Jiaotong University (China), 3.Jiangsu University (China), 4.Foshan Institute for New Materials (China))

Thermopower modulation, Amorphous InGaO3(ZnO)m, Effective channel thickness

https://doi.org/10.36463/idw.2022.0198

Here, we analyzed the transistor characteristics of amorphous InGaO₃(ZnO)_m thin film transistors (TFTs) by the electric field thermopower modulation and found that the effective channel thickness of the TFTs varies from ~2 nm to ~28 nm depending on the m-value.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[AMDp1-1] Electric Field Thermopower Modulation Analyses of Effective Channel Thickness of Amorphous InGaO3(ZnO)m Thin Film Transistors

[AMDp1-1] Electric Field Thermopower Modulation Analyses of Effective Channel Thickness of Amorphous InGaO₃(ZnO)_m Thin Film Transistors