We report the unusual black mura reliability behavior in the a-Si TFT when biased under extremely high intensity illumination (> 400000 Cd/cm2). However, the black mura reliability issue is effectively improved by embedding the higher energy band gap (~4.83 eV) design of lower deposited rate N-rich SiNx in the gate insulator. This reliability behavior originated from the injection of electrons in gate electrode, transported and...