International Display Workshops General Incorporated Association

[AMDp1-8L] Hysteresis-Free Like, High Mobility p-Channel Tin Monoxide Thin-Film Transistor

*Taikyu Kim1、Se Eun Kim1、Jae Kyeong Jeong1 (1.Hanyang University (Korea))

p-type oxide semiconductor, thin-film transistor, tin monoxide, hysteresis-free, high mobility

https://doi.org/10.36463/idw.2022.0223

We demonstrate high mobility p-channel tin monoxide (SnO) thin-film transistors with hysteresis free-like behavior. Intermediate alumina encapsulation in the middle of two postdeposition annealing processes significantly facilitates crystal growth, enabling considerable intertwining between crystals. Here, we report a simple method crystallizing the SnO thin-film.