International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 29 (IDW '22)

Proceedings of the International Display Workshops Volume 29 (IDW '22)

2022年12月14日 〜 2022年12月16日
Fukuoka International Congress Center

[AMDp1-9L] Thermally Stable Ternary Amorphous Oxide Semiconductors for HfO2-based Ferroelectric Field-Effect Transistor Memories

*Takanori Takahashi1、Mutsunori Uenuma1、Masaharu Kobayashi2、Yukiharu Uraoka1 (1. Nara Institute of Science and Technology (Japan)、2.The University of Tokyo (Japan))

Oxide semiconductors, HfO2, FeFET, Ferroelectric, Thin-film transistors

https://doi.org/10.36463/idw.2022.0226

We have proposed ternary AOS in views of compatibility with ALD process and thermal stabilities for HfO2-based ferroelectric memories. Our AOS-FET achieved mobility over 20 cm2/Vs under maximum annealing temperature of 600°C. This paper discusses FET performance with AOS deposited by sputtering or ALD, and potential for ferroelectric device applications.