International Display Workshops General Incorporated Association

15:30 〜 15:50

[FLX2-3 (Invited)] High Performance Solution Processed Oxide Semiconductors and Hybrid Materials for Flexible Electronics

*Juan Paolo Bermundo1、Yukiharu Uraoka1 (1.Nara Institute of Science and Technology (Japan))

Low Temperature Process, hybrid materials, fully solution processed TFTs

https://doi.org/10.36463/idw.2022.1058

Development of solution-processed channel and gate insulators is essential for large area flexible electronics. Here, we demonstrate how hybrid siloxane materials and oxide semiconductors are used in high performance fully solution-processed TFTs with mobilities >30 cm2/Vs. Our low temperature approach enables fabrication of fully solution-processed TFTs on flexible substrates.