International Display Workshops General Incorporated Association

14:50 〜 15:10

[FMC5-1] Electrical Characteristics of LTPS-TFTs Fabricated by ELA with Laser Intensity Distributions Controlled by Dot Array Masks

*Toru Okatsugi1、Keita Katayama1、Yoshiaki Kakimoto1、Daisuke Nakamura1、Tetsuya Goto2、Hiroshi Ikenoue1 (1.Kyushu University (Japan)、2.Tohoku University (Japan))

Low-temperature poly-Si, Thin-film transistors, Excimer laser annealing

https://doi.org/10.36463/idw.2022.0284

LTPS thin films are formed by using the ELA method,
and it is known that the crystal grain size can be controlled
by controlling the intensity distribution of the laser. In this
study, we investigated the effect of intensity distribution
during laser annealing on the electrical characteristics of
LTPS TFTs.