Electrical Characteristics of LTPS-TFTs Fabricated by ELA with Laser Intensity Distributions Controlled by Dot Array Masks

Toru Okatsugi, Keita Katayama, Yoshiaki Kakimoto, Daisuke Nakamura, Tetsuya Goto, Hiroshi Ikenoue

doi:https://doi.org/10.36463/idw.2022.0284

2:50 PM - 3:10 PM

[FMC5-1] Electrical Characteristics of LTPS-TFTs Fabricated by ELA with Laser Intensity Distributions Controlled by Dot Array Masks

*Toru Okatsugi¹, Keita Katayama¹, Yoshiaki Kakimoto¹, Daisuke Nakamura¹, Tetsuya Goto², Hiroshi Ikenoue¹ (1.Kyushu University (Japan), 2.Tohoku University (Japan))

Low-temperature poly-Si, Thin-film transistors, Excimer laser annealing

https://doi.org/10.36463/idw.2022.0284

LTPS thin films are formed by using the ELA method,
and it is known that the crystal grain size can be controlled
by controlling the intensity distribution of the laser. In this
study, we investigated the effect of intensity distribution
during laser annealing on the electrical characteristics of
LTPS TFTs.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[FMC5-1] Electrical Characteristics of LTPS-TFTs Fabricated by ELA with Laser Intensity Distributions Controlled by Dot Array Masks