14:50 〜 15:10
[FMC5-1] Electrical Characteristics of LTPS-TFTs Fabricated by ELA with Laser Intensity Distributions Controlled by Dot Array Masks
Low-temperature poly-Si, Thin-film transistors, Excimer laser annealing
LTPS thin films are formed by using the ELA method,
and it is known that the crystal grain size can be controlled
by controlling the intensity distribution of the laser. In this
study, we investigated the effect of intensity distribution
during laser annealing on the electrical characteristics of
LTPS TFTs.
and it is known that the crystal grain size can be controlled
by controlling the intensity distribution of the laser. In this
study, we investigated the effect of intensity distribution
during laser annealing on the electrical characteristics of
LTPS TFTs.