International Display Workshops General Incorporated Association

[FMCp3-4] Cu Process Development of 43UD DRD TFT Architecture by Halftone Photolithography 4-Mask Technology

*An-Thung Cho1, Wei-wei Hu1, Ren-hong Zhan1, Wen-bing Wu1, Ning-ning Li1, Wan-fei Yong1, James Hsu1, Wade Chen1 (1.ChuZhou HKC Optoelectronics Technology Co., Ltd., China (China))

Cu process, Undercut, Passivation via hole, Interface, Pre-treatment

https://doi.org/10.36463/idw.2022.0358

Screen abnormality is a subject that needs to be overcome in the development of the TFT-LCD Cu process. Passivation undercut is one of the more difficult line defect problems to overcome because the ITO contacts M1 or M2 are discontinuous in the via hole causing screen anomalies. We describe in detail our approach to improve undercut of passivation via hole. The problem without any other side...