The Japan Society of Applied Physics

[2-4] Effects of Deep Level Centers on Microwave Frequency Characteristics of GaAs Schottky Barrier Gate FET

S. ASAI, Y. ISHIOKA, H. KURONO, S. TAKAHASHI, H. KODERA (1.Central Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1972.2-4