[5-3] Stacked-Gate Avalanche-Injection Type MOS (SAMOS) Memory
H. Iizuka、T. Sato、F. Masuoka、K. Ohuchi、H. Hara、H. Tango、M. Ishikawa、Y. Takeishi
(1.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
https://doi.org/10.7567/SSDM.1972.5-3