Stacked-Gate Avalanche-Injection Type MOS (SAMOS) Memory

H. Iizuka; T. Sato; F. Masuoka; K. Ohuchi; H. Hara; H. Tango; M. Ishikawa; Y. Takeishi

doi:https://doi.org/10.7567/SSDM.1972.5-3

1972 Conference on Solid State Devices

Aug 30, 1972 - Aug 31, 1972
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[5-3] Stacked-Gate Avalanche-Injection Type MOS (SAMOS) Memory

H. Iizuka, T. Sato, F. Masuoka, K. Ohuchi, H. Hara, H. Tango, M. Ishikawa, Y. Takeishi (1.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1972.5-3

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