[1-5] Velocity-Field Characteristics and Current Oscillation in III-V Mixed Crystals, GaSbxAs1-x and InxGa1-xAs

Masataka INOUE, Kazumi ASHIDA, Takashi SUGINO, Junji SHIRAFUJI, Yosio INUISHI (1.Faculty of Engineering, Osaka University)

1973 International Conference on Solid State Devices |PDF Download

[1-6] PROGRESS OF MICROWAVE SOLID STATE DEVICES IN JAPAN

MICHIYUKI UENOHARA (1.Central Research Laboratories, Nippon Electric Co., Ltd.)

1973 International Conference on Solid State Devices |PDF Download

[1-7] NEW MODE OF OPERATION FOR AVALANCHE DIODES: HIGH RANK, HIGH EFFICIENCY FREQUENCY MULTIPLIERS

P. A. ROLLAND, G. SALMER, M. CHIVE J. MICHEL (1.Centre de Recherches sur les Proprietes Hyperfrequences des Milieux Condenses, Universite des Sciences et Techniques de LILLE, 2.Laboratoire d'Electronique et de Physique Appliquee)

1973 International Conference on Solid State Devices |PDF Download

[1-8] P+-Graded Junction-N+ High-Efficiency Avalanche (TRAPATT) Diode

H. Kawamoto (1.RCA Corporation David Sarnoff Research Center)

1973 International Conference on Solid State Devices |PDF Download

[1-9] Computer study of TRAPATT

Shinya HASUO, Toyosaku ISOBE (1.Fujitsu Laboratories, Ltd.)

1973 International Conference on Solid State Devices |PDF Download

[1-10] THERMAL EQUIVALENT CIRCUIT OF TRAPATT - DIODE

P. K. CHATURVEDI, W. S. KHOKLE (1.Central Electronics Engineering Research Institute)

1973 International Conference on Solid State Devices |PDF Download

[S-2] Ion Implantation

S. Namba, A. U. Mac Rae (1.Osaka University, 2.Bell Laboratories)

1973 International Conference on Solid State Devices |PDF Download

[2-1] Bipolar Transistors made by Ion Implantation

A. U. Mac Rae (1.Bell Laboratories)

1973 International Conference on Solid State Devices |PDF Download

[2-2] ANALITICAL CALCULATION OF THE VACANCY DISTRIBUTION AND THE SEMICONDUCTOR AMORPHIZATION DOSE DURING ION IMPLANTATION

V. V. YUDIN (1.Ministry of Electronic Industry)

1973 International Conference on Solid State Devices |PDF Download

[2-3] PROTON-ENHANCED DIFFUSION OF As IN Si FROM A DOPED POLYCRYSTALLINE SOURCE (DOPOS)

J. F. Gibbons, J. R. MacDonald, R. E. Tremain (1.Department of Electrical Engineering, Stanford University)

1973 International Conference on Solid State Devices |PDF Download