A lKb N-Silicon-Gate Static Random-Acess Memory with Two Different Depletion-Load Thresholds

1974 Conference on Solid State Devices

Sep 2, 1974 - Sep 3, 1974
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

K. Ohuchi, S. Tanaka, K. Ara, Y. Tanuma, N. Kubota, S. Horiuchi (1.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)