[B5-3] A lKb N-Silicon-Gate Static Random-Acess Memory with Two Different Depletion-Load Thresholds

K. Ohuchi、S. Tanaka、K. Ara、Y. Tanuma、N. Kubota、S. Horiuchi (1.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1974.B5-3