[A-5-3] A 256-b Nonvolatile Static Random-Access Memory with MNOS memory transistors S. Saito、N. Endo、Y. Uchida、T. Tanaka、Y. Nishi、K. Tamaru (1.Toshiba R & D Center, Tokyo Shibaura Electric Co., Ltd.) https://doi.org/10.7567/SSDM.1975.A-5-3