[A-3-3] Fully Ion Implanted DSA MOS IC

I. Ohkura、M. Ohmori、K. Shimotori、T. Nakano、Y. Hayashi、Y. Tarui (1.Mitsubishi Electric Corporation、2.Electrotechnical Laboratory)

https://doi.org/10.7567/SSDM.1976.A-3-3