The Japan Society of Applied Physics

[B-1-6] Improvement of Planar GaAs Devices by Controlling the Properties of the Epilayer and the Epilayer - Substrate Interface

L. M. F. Kaufmann, K. Heime (1.University of Duisburg, Semiconductor Electronics Laboratory)

https://doi.org/10.7567/SSDM.1976.B-1-6