[B-6-3] Quantitative In-depth Profile of Passivated Oxide Layers of GaAs by AES-SIMS - a Comparison of Thermal, Anodic and Plasma Oxidation

K. Watanabe、M. Hashiba、T. Yamashina (1.Department of Nuclear Engineering, Faculty of Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1977.B-6-3