[A-3-7] High Speed C-MOS IC Using Buried SiO2 Layer Formed by Ion Implantation
Katsutoshi Izumi, Masanobu Doken, Hisashi Ariyoshi
(1.Research and Development Bureau, 2.and Musashino Electrical Communication Laboratory N.N.T.)
https://doi.org/10.7567/SSDM.1979.A-3-7