[A-3-7] High Speed C-MOS IC Using Buried SiO2 Layer Formed by Ion Implantation
Katsutoshi Izumi、Masanobu Doken、Hisashi Ariyoshi
(1.Research and Development Bureau、2.and Musashino Electrical Communication Laboratory N.N.T.)
https://doi.org/10.7567/SSDM.1979.A-3-7
