[A-3-7] High Speed C-MOS IC Using Buried SiO2 Layer Formed by Ion Implantation

Katsutoshi Izumi, Masanobu Doken, Hisashi Ariyoshi (1.Research and Development Bureau, 2.and Musashino Electrical Communication Laboratory N.N.T.)

https://doi.org/10.7567/SSDM.1979.A-3-7