[A-5-4] Effects of High Temperature Hydrogen Annealing on n-channel Si-gate MNOS Devices

Y. Yatsuda, S. Minami, R. Kondo, T. Hagiwara, Y. Itoh (1.Central Research Laboratory, 2.Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1979.A-5-4