[A-5-4] Effects of High Temperature Hydrogen Annealing on n-channel Si-gate MNOS Devices

Y. Yatsuda、S. Minami、R. Kondo、T. Hagiwara、Y. Itoh (1.Central Research Laboratory、2.Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1979.A-5-4