[A-2-4] Hot-Electron Trapping Effects of Short Channel 64 K dynamic MOS RAM
M. Yamada、H. Matsumoto、T. Kobayashi、M. Kumanoya、M. Taniguchi、T. Nakano
(1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)
https://doi.org/10.7567/SSDM.1982.A-2-4