[A-6-6] Characterization of laser-induced epitaxial Si crystals by evaluating MOS FETs fabricated in grown layers

M. Miyao, M. Ohkura, I. Takemoto, M. Ichikawa, M. Tamura, T. Tokuyama (1.Central Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1982.A-6-6