[A-6-6] Characterization of laser-induced epitaxial Si crystals by evaluating MOS FETs fabricated in grown layers
M. Miyao、M. Ohkura、I. Takemoto、M. Ichikawa、M. Tamura、T. Tokuyama
(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1982.A-6-6