Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing

Tomoyasu Inoue; Kenji Shibata; Koichi Kato; Yuichi Mikata; Masahiro Kashiwagi

doi:https://doi.org/10.7567/SSDM.1983.A-3-3

1983 Conference on Solid State Devices and Materials

1983年8月30日〜 1983年9月1日
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-3-3] Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing

Tomoyasu Inoue、Kenji Shibata、Koichi Kato、Yuichi Mikata、Masahiro Kashiwagi (1.Toshiba Research and Development Center、2.Toshiba Semiconductor Device Engineering Laboratory、3.Toshiba Corporation)

https://doi.org/10.7567/SSDM.1983.A-3-3

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