[A-3-3] Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing
Tomoyasu Inoue, Kenji Shibata, Koichi Kato, Yuichi Mikata, Masahiro Kashiwagi
(1.Toshiba Research and Development Center, 2.Toshiba Semiconductor Device Engineering Laboratory, 3.Toshiba Corporation)
https://doi.org/10.7567/SSDM.1983.A-3-3
