Characteristics of Tungsten Gate MOSFETs for VLSIs

Hitoshi Kume; Eiji Takeda; Akihiro Shimizu; Yasuo Igura; Seiichi Iwata; Naoki Yamamoto; Shojiro Asai; Takaaki Hagiwara

doi:https://doi.org/10.7567/SSDM.1983.A-6-2

1983 Conference on Solid State Devices and Materials

1983年8月30日〜 1983年9月1日
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-6-2] Characteristics of Tungsten Gate MOSFETs for VLSIs

Hitoshi Kume、Eiji Takeda、Akihiro Shimizu、Yasuo Igura、Seiichi Iwata、Naoki Yamamoto、Shojiro Asai、Takaaki Hagiwara (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi Microcomputer Engineering, Ltd.)

https://doi.org/10.7567/SSDM.1983.A-6-2

▲