Characteristics of Tungsten Gate MOSFETs for VLSIs

Hitoshi Kume; Eiji Takeda; Akihiro Shimizu; Yasuo Igura; Seiichi Iwata; Naoki Yamamoto; Shojiro Asai; Takaaki Hagiwara

doi:https://doi.org/10.7567/SSDM.1983.A-6-2

1983 Conference on Solid State Devices and Materials

Aug 30, 1983 - Sep 1, 1983
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-6-2] Characteristics of Tungsten Gate MOSFETs for VLSIs

Hitoshi Kume, Eiji Takeda, Akihiro Shimizu, Yasuo Igura, Seiichi Iwata, Naoki Yamamoto, Shojiro Asai, Takaaki Hagiwara (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi Microcomputer Engineering, Ltd.)

https://doi.org/10.7567/SSDM.1983.A-6-2

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