The Japan Society of Applied Physics

1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30, 1983 - Sep 1, 1983
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-6-4] Two Step Deposition Method for Reducing Surface States of Mo Gate MOS Devices with Thin Gate Oxides

T. Amazawa, H. Oikawa (1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

https://doi.org/10.7567/SSDM.1983.A-6-4