Two Step Deposition Method for Reducing Surface States of Mo Gate MOS Devices with Thin Gate Oxides

1983 Conference on Solid State Devices and Materials

1983年8月30日〜 1983年9月1日
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

T. Amazawa、H. Oikawa (1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)