[A-7-4] The Impact of Drain Impurity Profile and Junction Depth on Submicron MOSFETs

Eiji TAKEDA、Tohhachi MAKINO、Takaaki HAGIWARA (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi Microcomputer Engineering, Ltd.)

https://doi.org/10.7567/SSDM.1983.A-7-4