Sidewall-Assisted Closely Spaced Electrode Technology for High Speed GaAs LSIs

Asamitsu Higashisaka; Masaoki Ishikawa; Fumiaki Katano; Shuji Asai; Takashi Furutsuka; Yoichiro Takayama

doi:https://doi.org/10.7567/SSDM.1983.B-2-3

1983 Conference on Solid State Devices and Materials

Aug 30, 1983 - Sep 1, 1983
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-2-3] Sidewall-Assisted Closely Spaced Electrode Technology for High Speed GaAs LSIs

Asamitsu Higashisaka, Masaoki Ishikawa, Fumiaki Katano, Shuji Asai, Takashi Furutsuka, Yoichiro Takayama (1.Microelectronics Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1983.B-2-3

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