Sidewall-Assisted Closely Spaced Electrode Technology for High Speed GaAs LSIs

Asamitsu Higashisaka; Masaoki Ishikawa; Fumiaki Katano; Shuji Asai; Takashi Furutsuka; Yoichiro Takayama

doi:https://doi.org/10.7567/SSDM.1983.B-2-3

1983 Conference on Solid State Devices and Materials

1983年8月30日〜 1983年9月1日
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-2-3] Sidewall-Assisted Closely Spaced Electrode Technology for High Speed GaAs LSIs

Asamitsu Higashisaka、Masaoki Ishikawa、Fumiaki Katano、Shuji Asai、Takashi Furutsuka、Yoichiro Takayama (1.Microelectronics Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1983.B-2-3

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