The Japan Society of Applied Physics

1983 Conference on Solid State Devices and Materials

1983 Conference on Solid State Devices and Materials

Aug 30, 1983 - Sep 1, 1983
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[C-3-4LN] FABRICATION OF SUBMICRON SEMICONDUCTOR DEVICES BY HOLOGRAPHIC METHOD --- IV SUBMICRON GATE PROCESS

N. NOMURA, Y. HIROFUJI, T. EDAMATSU, K. KUGIMIYA (1.Central Research Lab., Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1983.C-3-4LN