[C-3-4LN] FABRICATION OF SUBMICRON SEMICONDUCTOR DEVICES BY HOLOGRAPHIC METHOD --- IV SUBMICRON GATE PROCESS

N. NOMURA、Y. HIROFUJI、T. EDAMATSU、K. KUGIMIYA (1.Central Research Lab., Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1983.C-3-4LN