[C-4-3LN] Induced Dislocations and Change of the EL2 Trap Density in Undoped Bulk GaAs by Si3N4 or SiO2 Cap Annealing

F. Hasegawa、N. Yamamoto、T. Sumi、Y. Nannichi (1.Institute of Material Science, University of Tsukuba)

https://doi.org/10.7567/SSDM.1983.C-4-3LN