[C-4-4LN] Deep Levels in MOCVD InP / S.I. InP Structure Used for InP MESFET
Mototsugu OGURA, Masashi MIZUTA, Nobuyasu HASE, Hiroshi KUKIMOTO
(1.Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 2.Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.)
https://doi.org/10.7567/SSDM.1983.C-4-4LN
