[C-4-4LN] Deep Levels in MOCVD InP / S.I. InP Structure Used for InP MESFET

Mototsugu OGURA、Masashi MIZUTA、Nobuyasu HASE、Hiroshi KUKIMOTO (1.Imaging Science and Engineering Laboratory, Tokyo Institute of Technology、2.Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1983.C-4-4LN